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Control of threshold voltage of organic field-effect transistors by space charge polarization
Authors:Heisuke Sakai   Koudai Konno  Hideyuki Murata  
Affiliation:aJapan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Abstract:We demonstrate organic field-effect transistors (OFETs) with an ion-dispersed polymer for the gate dielectrics. By applying external electric field (Vex), the dispersed ions can migrate by electrophoresis and separated ion pairs form space charge polarization in the gate dielectrics. After Vex was applied, the drain current is increased over 7 times and threshold voltage is decreased from − 12.9 V to − 2.9 V. The shift direction of Vth is controllable by the polarity of the Vex. Results of ultraviolet/visible differential absorption study reveal that the active layer of OFETs is charged not only electrostatically but electrochemically with increasing the time after Vex was applied.
Keywords:Organic field-effect transistors (OFETs)   Threshold voltage shift   Polarization   Gate dielectric
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