| 高低压兼容单片CMOS驱动器的设计 |
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| 引用本文： | 庄庆德,童勤义,陈德英,唐国洪.高低压兼容单片CMOS驱动器的设计[J].微电子学,1988(1). |
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| 作者姓名： | 庄庆德 童勤义 陈德英 唐国洪 |
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| 作者单位： | 南京工学院微电子中心
(庄庆德，童勤义，陈德英)，南京工学院微电子中心(唐国洪) |
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| 摘 要： | 采用标准n阱硅栅等平面CMOS工艺,将耐压大于200V、吸收电流大于200mA的高压功率VMOS器件与工作在5V电源电压的CMOS控制电路兼容在同一个硅芯片上。分析了电路设计及工艺措施,证明这种技术可以低成本地制作各种低高压兼容电路。
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| 关 键 词： | 功率器件 驱动器 CMOS工艺 |
The Design of a High/Low Voltage Compatable Monolithic CMOS Driver |
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| Qingde Zhuang,Qingyi Tong,Deying Chen and Guohong Tang.The Design of a High/Low Voltage Compatable Monolithic CMOS Driver[J].Microelectronics,1988(1). |
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| Authors: | Qingde Zhuang Qingyi Tong Deying Chen and Guohong Tang |
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| Affiliation: | Microelectronics Center of Nanjing Institute of Technology |
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| Abstract: | Using standard n-well Si-gate isoplanar CMOS process, a compatable monolithic IC is made, into which an NMOS high-voltage power device with working voltage up to 200V and sink current over 200mA and a CMOS control circuit operating at 5V supply voltage is integrated. An analysis of the design of the circuit and the processing steps is made.It is demonstrated that different high/low voltage compatable circuits can be fabricated at low cost using this technology. |
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| Keywords: | power device driver CMOS process |
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