On the transient response of organic electrochemical transistors |
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| Affiliation: | 1. São Carlos Institute of Physics, University of São Pulo, PO Box 369, 13560-970, São Carlos, SP, Brazil;2. Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA;1. Department of Informatics and Microsystem Technology, University of Applied Sciences Kaiserslautern, Zweibrücken, Germany;2. RAM Group DE GmbH, Research and Development Center, Zweibrücken, Germany;3. RWTH Aachen University, Lehrstuhl für Experimentalphysik I A und I. Physikalisches Institut, Aachen, Germany;1. Dipartimento di Chimica Industriale ‘Toso Montanari’, Università di Bologna, Viale Risorgimento 4, 40136, Bologna, Italy;2. Dipartimento di Fisica e Astronomia, Università di Bologna, Viale Berti Pichat 6/2, 40127, Bologna, Italy;3. Centro Interdipartimentale per la Ricerca Industriale – Meccanica avanzata e materiali, Università di Bologna, Viale del Risorgimento 2, 40136, Bologna, Italy;1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden;2. Institut d’Électronique, Micro-électronique et de Nanotechnologie, CNRS, Lille University, Villeneuve d’Ascq, France;1. Department of Electrical Engineering and Information Technology, University Federico II, Naples, Italy;2. Institute of Materials for Electronics and Magnetism IMEM-CNR, Parco Area delle Scienze 37/A, 43124 Parma, Italy;3. Department of Physics and Earth Science, University of Parma, Parco Area delle Scienze 7/A, 43124 Parma, Italy;1. Department of Science and Technology (ITN), Linköpings Universitet, Campus Norrköping, Bredgatan 34, 601 74 Norrköping, Sweden;2. Univ. Paris Diderot, Sorbonne Paris Cité, ITODYS, UMR 7086 CNRS, 15 rue J-A de Baïf, 75205 Paris Cedex 13, France;3. LPICM, UMR CNRS 7647, Ecole Polytechnique, Route de Saclay, 91128 Palaiseau, France |
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| Abstract: | We present a universal model for the transient drain current response in organic electrochemical transistors (OECTs). Using equivalent circuits and charge injection physics, we are able to predict the drain current in OECT devices upon application of a gate voltage input. The model is applicable to both plain and membrane-functionalized devices, and allows us to extract useful physical quantities such as resistances and capacitances, which are related to functional properties of the system. We are also able to use the model to reconstruct the magnitude and shape in time of an applied voltage source based on the observed drain current response. This was experimentally demonstrated for drain current measurements under an applied action potential. |
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| Keywords: | Organic bioelectronics Organic electrochemical transistors Neuron recording |
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