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7.8 GHz small-signal modulation bandwidth of 1.3 μm DQWGaInAsN/GaAs laser diodes
Authors:Reinhardt   M. Fischer   M. Kamp   M. Forchel   A.
Affiliation:Inst. for Tech. Phys., Wurzburg Univ.;
Abstract:High frequency characterisation of double quantum well GaInAsN laser diodes emitting at 1.28 μm is reported. The 3 dB bandwidth of ridge waveguide lasers was measured to be 7.8 GHz at 120 mA under CW operation demonstrating the potential for high speed operation of these devices
Keywords:
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