| 氮化Si基ZnO/Ga_2O_3制备GaN薄膜 |
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| 引用本文： | 高海永,庄惠照,薛成山,王书运,董志华,李忠.氮化Si基ZnO/Ga_2O_3制备GaN薄膜[J].微纳电子技术,2004,41(6):26-29. |
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| 作者姓名： | 高海永 庄惠照 薛成山 王书运 董志华 李忠 |
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| 作者单位： | 山东师范大学物理与电子科学学院,山东,济南,250014 |
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| 基金项目： | 国家自然科学基金(90301002,90201025)资助 |
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| 摘 要： | 利用射频磁控溅射法在Si衬底上先溅射ZnO缓冲层,接着溅射Ga2O3薄膜,然后ZnO/Ga2O3膜在管式炉中常压下通氨气进行氮化,反应自组生成GaN薄膜。XRD测量结果表明,利用该方法制备的GaN薄膜是沿c轴方向择优生长的六角纤锌矿多晶结构的薄膜,利用SEM观测了其表面形貌,PL测量结果发现了位于351nm处的室温光致发光峰。
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| 关 键 词： | Ga2O3薄膜 ZnO缓冲层 氮化 射频磁控溅射 |
| 文章编号： | 1671-4776(2004)06-0026-04 |
| 修稿时间： | 2003年11月28 |
Fabrication of GaN films by nitriding ZnO/Ga2O3 films on silicon substrates |
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| GAO Hai-yong,ZHUANG Hui-zhao,XUE Cheng-shan,WANG Shu-yun,DONG Zhi-hua,LI Zhong.Fabrication of GaN films by nitriding ZnO/Ga2O3 films on silicon substrates[J].Micronanoelectronic Technology,2004,41(6):26-29. |
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| Authors: | GAO Hai-yong ZHUANG Hui-zhao XUE Cheng-shan WANG Shu-yun DONG Zhi-hua LI Zhong |
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| Abstract: | ZnO buffer layers and Ga2O3 films were sputtered on silicon substrates using radio frequency sputtering system. Then ZnO/Ga2O3 films were nitrided in tube furnace under flowing NH3 ambience to reactively fabricate GaN films. The meaurement results of X-ray diffraction(XRD)revealed that the as-prepared GaN films were grown in c axis orientation with hexagonal wurtzite structure. The surface morphology of the GaN films were studied by scanning electron microscopy(SEM). And the mearement result of room-temperature photoluminescence spectra found the PL peak locates at 351 nm. |
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| Keywords: | Ga2O3 thin films ZnO buffer layers nitridation RF magnetron sputtering |
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