Monolithic two-dimensional GaAs/AIGaAs laser arrays fabricated by chlorine lon-beam-assisted micromachining |
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Authors: | W D Goodhue K Rauschenbach C A Wang J P Donnelly R J Bailey G D Johnson |
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Affiliation: | (1) Lincoln Laboratory, Massachusetts Institute of Technology Lexington, 02173-9108 Massachusetts |
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Abstract: | Chlorine ion-beam-assisted etching (IBAE) has been used to micromachine laser facets and deflecting mirrors for monolithic
two-dimensional GaAs/AIGaAs laser arrays. Three laser cavity/deflector designs have been successfully implemented. The first
utilizes a parabolic deflecting mirror to directly focus the laser radiation; the second consists of a folded cavity with
a vertical facet, a top surface facet, and an internal 45° reflector; and the third has a folded cavity with an internal Al0.2Ga0.8As/Al0.8Ga0.2As dielectric mirror stack and a top surface facet formed in a single etch step with two internal 45° reflectors. The parabolic
deflecting mirrors are currently modeled forf- 0.8 collection efficiency, making the first design attractive in incoherent arrays for high-power applications such as pumping
Nd:YAG lasers. The other two structures are of interest for incoherent or coherent arrays used in high- and medium-power applications,
since the top surface facets can easily be antireflection coated. The design with a dielectric mirror stack is particularly
simple to fabricate. |
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Keywords: | GaAs/AIGaAs ion-beam-assisted etching laser arrays semiconductor diodelasers |
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