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Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors |
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| Authors: | J. R. LaRoche F. Ren D. Temple S. J. Pearton J. M. Kuo A. G. Baca P. Cheng Y. D. Park Q. Hudspeth A. F. Hebard S. B. Arnason |
| Affiliation: | a Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA b MCNC, Research Triangle Park, NC 27709, USA c Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA d Bell Labs, Lucent Technologies, Murray Hill, NJ 07974, USA e Sandia National Laboratory, Albuquerque, NM 87185, USA f Naval Research Laboratory, Washington, DC 20375, USA g Department of Physics, University of Florida, Gainesville, FL 32611, USA |
| Abstract: | Wet etch processing techniques for InGaAs/InAl/As/InGaAs transistors are used to fabricate an N-channel HEMT (High Electron Mobility Transistor) with Fe contacts. These processing techniques can easily be extended for dilute magnetic semiconductor regrowth and for testing of various spin injection geometries. |
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