Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon |
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Authors: | Moselund KE Bouvet D Tschuor L Pott V Dainesi P Eggimann C Le Thomas N Houdre R Ionescu AM |
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Affiliation: | Electron. Lab., Ecole Polytech. Fed. de Lausanne; |
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Abstract: | In this work we present a bulk silicon technology platform able to cointegrate gate-all-around (GAA) MOSFETs and local SOI waveguides with pentagonal cross section. Wire diagonals of 100-800 nm are obtained using a lithographic resolution of 0.8 mum. Well-functioning triangular multigate MOSFETs are reported, and tested up to 150 degC. A significant increase is observed in the low-field mobility mu0 for small devices (Weffles500 nm), which is attributed to local volume inversion in the corners. Preliminary characterization of the optical waveguides is carried out, showing optical losses of a few dB/cm. The processing is entirely CMOS compatible, does not require access to advanced lithography equipment, and is based on a silicon bulk substrate. Thus, this technology might serve as the basis for a low-cost, high-performance optical signaling platform |
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