Determination of gallium concentration in germanium doped using neutron-induced nuclear transmutation from measurements of resistivity in the region of hopping conductivity

Methods for determining the concentration of gallium in germanium doped using nuclear transmutations induced by thermal and epicadmium neutrons from measurements of resistivity in the region of low (liquid-helium) temperatures are considered. In order to evaluate the gallium concentration, it is suggested to use the concentration dependences of hopping resistivity ρ₃ and the resistivity measured at a temperature of 2.5 K.