Thin-film polycrystalline silicon solar cells formed by flash lamp annealing of a-Si films |
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| Authors: | Yohei Endo Keisuke Ohdaira Shogo Nishizaki Hideki Matsumura |
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| Affiliation: | a Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
b University of Miyazaki, 1-1, Gakuen Kibanadai Nishi, Miyazaki 889-2192, Japan |
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| Abstract: | We have fabricated thin-film solar cells using polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of 4.5-µm-thick amorphous Si (a-Si) films deposited on Cr-coated glass substrates. High-pressure water-vapor annealing (HPWVA) is effective to improve the minority carrier lifetime of poly-Si films up to 10 µs long. Diode and solar cell characteristics can be seen only in the solar cells formed using poly-Si films after HPWVA, indicating the need for defect termination. The actual solar cell operation demonstrated indicates feasibility of using poly-Si films formed through FLA on glass substrates as a thin-film solar cell material. |
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| Keywords: | Flash lamp annealing Polycrystalline silicon High-pressure water-vapor annealing Minority carrier lifetime |
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