Terahertz Schottky barrier diodes with various isolation designs for advanced radio frequency applications |
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| Authors: | S.-M. Chen F.R. Juang C.-P. Chao |
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| Affiliation: | a VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701b Department of Electrical Engineering, National University of Kaohsiung, No. 251, 280 Lane, Der-Chung Rd., Nan-Tzu Dist., Kaohsiung, Taiwan 81148c R&D Division, Taiwan Semiconductor Manufacturing Company, Ltd. 8, Li-Hsin Rd. 6, Hsinchu Science Park, Hsinchu, Taiwan 300 |
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| Abstract: | ![]()
High performance nanometer NiSi2-Si Schottky barrier diode arrays (SBDA) with various isolation designs, including poly Si gate (PSG) and resist protection oxide (RPO), are developed for advanced radio frequency applications. Radio frequency performances of these developed SBDAs are investigated and compared to that with the conventional shallow trench isolation. All of the SBDAs are fabricated with a foundry state-of-the -art 45 nm complementary metal oxide semiconductor technology. Both of PSG and RPO insulated SBDAs have higher cutoff frequency and a simpler preparation process. Specifically, the PSG insulted SBDA could achieve a cutoff frequency of up to 4.6 THz. |
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| Keywords: | NiSi2-Si Schottky barrier diode Cutoff frequency Terahertz (THz) |
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