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Monocrystalline zinc oxide films grown by atomic layer deposition |
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| Authors: | ?. Wachnicki T. Krajewski B. Witkowski K. Kopalko M. Guziewicz E. Guziewicz |
| Affiliation: | a Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland b Institute of Electron Technology (ITE), al. Lotników 32/46, Warsaw 02-668, Poland c Cardinal Stefan Wyszynski University, College of Science, Department of Mathematics and Natural Sciences, Warszawa, Poland |
| Abstract: | In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 °C using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07°. Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV. |
| Keywords: | Zinc oxide Atomic layer deposition Epitaxy Monocrystalline Diethylzinc |
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