In-situ electrical resistance measurement of the selenization process in the CuInGa-Se system |
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Authors: | Wei Liu Jian-Guo Tian Feng-Yan Li Yun Sun |
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Affiliation: | a Key Laboratory of Photo-electronics Thin Film Devices and Technology of Tianjin, Institute of Photoelectronic Thin Film Device and Technology, Nankai University Tianjin 300071, Chinab Photonics Center, College of Physics, Nankai University, Tianjin 300071, China |
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Abstract: | In this work the selenization reactions and reaction paths in CuInxGa1-xSe2 thin films prepared by sputtering and post-selenization process are investigated. The in-situ electrical resistance measurement technique is applied to monitor all the selenization reactions. The crystal structure is determined by X-ray diffraction (XRD) measurement. From the analysis of resistance-temperature curves and the XRD patterns, the phase evolutions of various crystalline and selenization reaction paths have been obtained. From these measurements, the reaction mechanisms and kinetics in the CuInGa-Se system are further understood. |
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Keywords: | CuInxGa1-xSe2 In-situ resistance measurement Selenization Reaction mechanism |
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