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In-situ electrical resistance measurement of the selenization process in the CuInGa-Se system
Authors:Wei Liu  Jian-Guo Tian  Feng-Yan Li  Yun Sun
Affiliation:
  • a Key Laboratory of Photo-electronics Thin Film Devices and Technology of Tianjin, Institute of Photoelectronic Thin Film Device and Technology, Nankai University Tianjin 300071, China
  • b Photonics Center, College of Physics, Nankai University, Tianjin 300071, China
  • Abstract:In this work the selenization reactions and reaction paths in CuInxGa1-xSe2 thin films prepared by sputtering and post-selenization process are investigated. The in-situ electrical resistance measurement technique is applied to monitor all the selenization reactions. The crystal structure is determined by X-ray diffraction (XRD) measurement. From the analysis of resistance-temperature curves and the XRD patterns, the phase evolutions of various crystalline and selenization reaction paths have been obtained. From these measurements, the reaction mechanisms and kinetics in the CuInGa-Se system are further understood.
    Keywords:CuInxGa1-xSe2   In-situ resistance measurement   Selenization   Reaction mechanism
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