Selective Growth of CdTe on Si(211): First-Principle Calculations |
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| Authors: | Y Huang XS Chen H Duan W Lu |
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| Affiliation: | (1) National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China |
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| Abstract: | The adsorption of CdTe layers on clean and As-passivated Si(211) substrates has been simulated by first-principle calculations
in this study. Based on the simulation results, we theoretically show the important roles of the As4 passivation during the epitaxial growth. Arsenic can saturate part of the dangling bonds and weaken the surface states. The
partial passivation finally induces the B-face polarity selection automatically. This conclusion can provide further explanations
for the successful growth of large area high-quality CdTe(211)B layers on the Si(211) substrates. |
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| Keywords: | Si(211) As-passivation CdTe selective growth first-principle density of states (DOS) |
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