Prevention of thermal surface damage in GaAs by encapsulated annealing in an arsine ambient |
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| Authors: | P. M. Campbell O. Aina B. J. Baliga |
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| Affiliation: | (1) Corporate Research and Development Center, General Electric Company, 12345 Schenectady, NY;(2) Present address: Naval Research Laboratory, 20375 Washington, DC;(3) Present address: Allied/Bendix Aerospace Technology Center, 21045 Columbia, MD |
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| Abstract: | This paper shows that both capped and capless techniques commonly used in the high temperature annealing of GaAs can cause
thermal surface damage characterized by a decrease in the net carrier concentration in a region within a few micrometers of
the surface. This thermal surface damage can be prevented by a technique of encapsulated annealing in an arsine ambient.
Presented at the 26th Annual Electronic Materials Conference, Santa Barbara, CA, June 21, 1984. |
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| Keywords: | gallium arsenide (GaAs) high-temperature annealing encapsulation compensation surface damage arsine overpressure |
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