Long-term structural relaxation and photoinduced degradation in a-Si: H |
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| Authors: | K. V. Kougia A. B. Pevtsov |
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| Affiliation: | (1) Pediatric Medical Academy, 194100 St. Petersburg, Russia;(2) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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| Abstract: | The effect of heating-illumination cycling on the electrical properties of a-Si: H fabricated in a glow discharge was investigated. Comparison of experimental and theoretical results shows that photostimulated degradation of a-Si: H (the Staebler-Wronski effect) may occur due to long-term degradation of structural defects generated by preliminary heating. Fiz. Tekh. Poluprovodn. 32, 1272–1276 (October 1998) |
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