Electrical properties of Ta2O5 films deposited on ZnO |
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| Authors: | Nandi S K Chatterjee S Samanta S K Dalapati G K Bose P K Varma S Patil Shivprasad Maiti C K |
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| Affiliation: | (1) Department of Electronics and ECE, Indian Institute of Technology, 721 302 Kharagpur, India;(2) Department of Mechanical Engineering, Jadavpur University, 700 032 Kolkata, India;(3) Institute of Physics, 751 005 Bhubaneswar, India |
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| Abstract: | High dielectric constant (high-k) Ta2O5films have been deposited on ZnO/p-Si substrate by microwave plasma at 150°C. Structure and composition of the ZnO/p-Si films
have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray
photoelectron spectroscopy (XPS) for chemical composition. The electrical properties of the Ta2O5/ZnO/p-Si metal insulator semiconductor (MIS) structures were studied using high frequency capacitance-voltage (C-V), conductance-voltage
(G-V) and current-voltage (I-V) characteristics. Charged trapping properties have been studied by measuring the gate voltage
shift due to trapped charge generation under Fowler-Nordheim (F-N) constant current stressing. |
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| Keywords: | ZnO Ta2O5 rf magnetron sputtering microwave plasma PECVD high-k |
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