Microstructure transformations induced by modified-layers on pentacene polymorphic films and their effect on performance of organic thin-film transistor |
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Authors: | Guang-Cai Yuan Zhisong Lu Zheng Xu Cheng Gong Qun-Liang Song Su-Ling Zhao Fu-Jun Zhang Na Xu Ye Gan Hong-Bin Yang Chang Ming Li |
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Affiliation: | 1. Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;2. Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China;3. School of Chemical and Biomedical Engineering and Center for Advanced Bionanosystems, Nanyang Technological University, 70 Nanyang Dr., Singapore 637457, Singapore;4. Central Research Institute, BOE Technology Group Co., Ltd., Beijing 100016, China |
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Abstract: | Phenyltrimethoxysilane was used to modify SiO2 insulator and significantly enhanced the pentacene based organic thin-film transistors (OTFTs). The crystal structure, surface morphology, molecular structure and microstructure of pentacene polymorphic films with and without the modifications were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and contact angle meter. XRD studies reveal a decreased tilt angle (θT) of pentacene molecules from c-axis toward a-axis, indicating that polymorphs transformation from the “triclinic bulk” phase to the “thin film” phase and orthorhombic phase occurs. AFM images show that the surface roughness of gate insulators has no influence on performance of the pentacene based OTFT. These results provide strong evidence that the performance improvement of OTFT after PhTMS modification of SiO2 insulator surface is related to the microstructure transformation of the semiconductor. It suggests that the modified-layer may alter the molecular geometry and further induce structural phase transitions in the pentacene films for the performance improvement. |
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Keywords: | Organic thin-film transistor PhTMS modified-layer Microstructure transformation Polymorphic films |
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