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一种基于数字逻辑控制的低损耗双半桥驱动芯片
引用本文:臧延峰,陈畅,常昌远,凌德强,韩雄.一种基于数字逻辑控制的低损耗双半桥驱动芯片[J].微电子学,2020,50(2):176-183.
作者姓名:臧延峰  陈畅  常昌远  凌德强  韩雄
作者单位:东南大学 微电子学院, 南京 210000
基金项目:国家自然科学基金资助项目(61376029)
摘    要:设计了一种集成双半桥和四功率开关的驱动芯片。采用双路对称设计,每一路可单独控制使能、自举和驱动。芯片内部采用高精度的基准源以及LDO电路,同时具有欠压死锁、过压保护和过温保护功能。死区控制可避免上下功率管直通大电流,自举设计可使上功率管的开启电压达到5 V,降低了功率管自身的损耗,使功率管输出达到11.90 V。采用TSMC 0.18μm BCD工艺进行流片。测试结果表明,输出的方波信号幅度为11.96 V/11.95 V,死区时间为60 ns/80 ns,静态功耗低至478μA。

关 键 词:高精度基准源  过温保护  自举  死区控制
收稿时间:2019/6/1 0:00:00

A Low Loss Dual Half Bridge Driver Chip Based on Digital Logic Control
ZANG Yanfeng,CHEN Chang,CHANG Changyuan,LING Deqiang,HAN Xiong.A Low Loss Dual Half Bridge Driver Chip Based on Digital Logic Control[J].Microelectronics,2020,50(2):176-183.
Authors:ZANG Yanfeng  CHEN Chang  CHANG Changyuan  LING Deqiang  HAN Xiong
Affiliation:School of Microelectronics, Southeast University, Nanjing 210000, P. R. China
Abstract:A driver chip with integrated dual half bridge drivers and quad power switch was presented. A two way symmetrical design was used, each of which could be individually controlled to enable, bootstrap and drive. A high precision reference source and LDO circuit was used, which had the functions of under-voltage deadlock, over-voltage protection and over-temperature protection. The dead time control could avoid the direct large current of the high side and low side power tubes. The boost design could turn the high side power tube to 5 V, which could reduce the loss of the power tube itself and make its output reach 11.90 V. The proposed circuit was fabricated in TSMC 0.18 μm BCD process. The tested results showed that a square wave signal with an output amplitude of 11.96 V/11.95 V and a dead time of 60 ns/80 ns was obtained. The circuit’s static power consumption was as low as 478 μA.
Keywords:high precision reference source  over-temperature protection  boost  dead time control
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