| 基底几何尺寸对金刚石沉积过程的影响 |
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| 引用本文： | 唐璧玉,靳九成.基底几何尺寸对金刚石沉积过程的影响[J].微细加工技术,1996(2):58-61. |
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| 作者姓名： | 唐璧玉 靳九成 |
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| 作者单位： | 湖南大学化工系，湖南大学分析测试中心 |
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| 摘 要： | 利用灯丝热解化学汽相沉积技术在硅基底的边缘、角域处及条形基底上生长出金刚石晶体和薄膜，研究了基底几何尺寸对金刚石沉积过程的影响，探讨了金刚石成核和生长的机理。
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| 关 键 词： | 化学汽相沉积 金刚石薄膜 基底几何形状与尺寸 |
EFFECTS OF GEOMETRY OF SUBSTRATE ON DEPOSITION PROCESS OF DIAMOND |
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| Tang Biyu,Jing Jiucheng, Cheng zhongzhang.EFFECTS OF GEOMETRY OF SUBSTRATE ON DEPOSITION PROCESS OF DIAMOND[J].Microfabrication Technology,1996(2):58-61. |
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| Authors: | Tang Biyu Jing Jiucheng Cheng zhongzhang |
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| Abstract: | Diamond crystals and thin films have been deposited on the edge and angleareas of silicon substrate and on the stripe-shape substrate, by hot-filament-activated chemical vapor deposition. The effects of geometry of substrate on deposition process were studied,and nucleation and growth mechanism of diamondwere also discussed. |
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| Keywords: | CVD diamond thin films geometry of substrate |
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