| Cleaning method of InSb [1^-1^- 1^-] B of n-InSb [111｜ A/B for the growth of epitaxial layers by liquid phase epitaxy |
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| 作者单位： | [1]Electronic Component Industry （ECI）-Optoelectronic Industry, P. O. Box 19575-199, Tehran, Iran [2]Institute of Physics, Azerbaijan University, Baku, Azerbaijan [3]Department of Mathematics, Razi University, Kermansha, Iran |
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| 基金项目： | Acknowledgements We would like to thank our colleagues in optoelectronic industry, Dr. Fatalian professor of physics in Razi University Kermanshah for edit of this paper, Ms. M. Khalvandi teacher of physics and Ms. M. Jafarnegad master of mathematics, for their assistance in this project. |
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| 摘 要： |
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| 关 键 词： | 锑化铟 生长层 清洁方法 液相外延 外延层 晶体结构 结晶方向 化学性质 |
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