Preparation of Aluminum Nitride–Silicon Carbide Nanocomposite Powder by the Nitridation of Aluminum Silicon Carbide |
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| Authors: | Kiyoshi Itatani Ryuji Tsukamoto Anne C A Delsing Hubertus T Hintzen Isao Okada |
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| Affiliation: | Department of Chemistry, Faculty of Science and Engineering, Sophia University, Tokyo 102-8554 Japan;Laboratory of Solid State and Materials Chemistry, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands |
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| Abstract: | Aluminum nitride (AlN)–silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al4SiC4) with the specific surface area of 15.5 m2·g?1. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich phases. The formation of homogeneous solid solution proceeded with increasing nitridation temperature from 1400° up to 1500°C. The specific surface area of the AlN–SiC powder nitrided at 1500°C for 3 h was 19.5 m2·g?1, whereas the primary particle size (assuming spherical particles) was estimated to be ～100 nm. |
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| Keywords: | aluminum nitride silicon carbide nanocomposites |
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