Effect of hydrogen plasma passivation on performance of HIT solar cells |
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| Authors: | Seung Jik LeeSe Hwan Kim Dae Won KimKi Hyung Kim Beom Kyu KimJin Jang |
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| Affiliation: | a Deptartment of Information Display, Kyung Hee University, Seoul, Republic of Korea
b PV Technology Team, Hyosung Co. Ltd., Seoul, Republic of Korea |
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| Abstract: | We studied the performance improvement of HIT solar cells by optimizing H2 plasma exposure and deposition of thin a-S:H layer on c-Si. With increasing H2 treatment time, the VOC increases until 80 s and then decreases, indicating the optimum time is 80 s. It is found that the cell performance is almost the same with and without a thin a-Si:H layer when 80 s plasma is treated on the c-Si before i-layer deposition. The conversion efficiency of 14.04% was achieved at the substrate temperature of 160 °C. |
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| Keywords: | Silicon heterojunction (SHJ) Surface passivation Hydrogen pretreatment |
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