A single p-i-n junction amorphous-silicon solar cell withconversion efficiency of 12.65%

A conversion efficiency of 12.65% was obtained at AM-1.5, 100 mW/cm² for a single p-i-n junction amorphous-Si solar cell of 1.05 cm², with a glass/SnO₂/p-i-n/back-electrode structure. The solar cell had a short-circuit current of 19.13 mA/cm², an open-circuit voltage of 0.885 V, and a fill factor of 74.7%. The reason why the efficiency of the produced solar cell was enhanced by hot-annealing treatment is considered to be due to the reduction of the minute leaks caused by the pinhole treatment and the reduction of the number of pinholes by reverse-bias annealing treatment. It is believed that because of the minute irregularities on the surface of SnO₂, the diffuse light in the solar cell increased the effective optical length in the i layer. Therefore the collection efficiency in the long-wavelength region was enhanced