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功率HIC基板及其工艺布局设计研究
引用本文:夏俊生,周曦.功率HIC基板及其工艺布局设计研究[J].电子与封装,2011,11(10):10-14,17.
作者姓名:夏俊生  周曦
作者单位:华东光电集成器件研究所,安徽蚌埠,233042
摘    要:基板选用和工艺布局是功率混合集成电路两项重要技术内容。根据基板材料不同,功率基板及其布线工艺主要分为陶瓷基板和金属基板两大类。常规陶瓷基板以96%Al2O3陶瓷为代表,高导热陶瓷基板以BeO、AIN陶瓷为代表。陶瓷功率基板大部分采用厚膜布线工艺,另一种布线方式是DBC布线。绝缘金属基板的种类很多,最常使用的是铝基板,另...

关 键 词:功率混合集成电路(HIC)  功率基板  工艺布局

The Study of Power HIC Substrate and its Process Layout Design
XIA Jun-sheng,ZHOU Xi.The Study of Power HIC Substrate and its Process Layout Design[J].Electronics & Packaging,2011,11(10):10-14,17.
Authors:XIA Jun-sheng  ZHOU Xi
Affiliation:(East China Institute of Photo-electron ic, Bengbu 233042, China )
Abstract:The use of substrate and process layout are two important tasks of the power HIC.According to the substrate material,there are two kinds of power substrate and its layout process,ceramic and metal substrate. The normal ceramic substrate is represented by 96% Al2O3.The high thermal conductivity substrate is represented by BeO and A1N.Most of the ceramic power substrates use the thick-film layout process.Another kind of layout process is DBC. There are many kinds of insulated metal substrates. The most commonly used is aluminum, the other one is the stainless steel. The process layout of the power HIC, there are two main forms, namely single-board integrated layout and discrete layout. The former applies to the low-power circuits, and the latter applies to the high-power circuits.
Keywords:power HIC  power substrate  process layout
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