PLD法制备ZnO薄膜的退火特性和蓝光机制研究

通过脉冲激光沉积(PLD)方法,在O2中和100～500℃衬底温度下,用粉末靶在Si(111)衬底上制备了ZnO薄膜,在300℃温度下生长的薄膜在400～800℃温度和N2氛围中进行了退火处理,用X射线衍射(XRD)谱、原子力显微镜(AFM)和光致发光(PL)谱表征薄膜的结构和光学特性。XRD谱显示,在生长温度300℃时获得较好的复晶薄膜,在退火温度700℃时获得最好的六方结构的结晶薄膜;AFM显示,在此退火条件下,薄膜表面平整、晶粒均匀;PL谱结果显示,在700℃退火时有最好的光学特性。

Study of annealing property and blue-emission mechanism of ZnO thin films deposited by PLD

Zinc oxide thin films were obtained on Si (111) substrate with growth temperature from 100 to 500 ℃ in O2 ambient by pulsed laser deposition(PLD) using a ZnO powder target.ZnO thin films deposited at 300 ℃ were treated at annealing temperatures from 400 ℃ up to 800 ℃ in N2 ambient.The structural and optical properties of deposited thin films were characterized by X-ray diffraction(XRD),atomic force microscopy(AFM) and photoluminescence(PL) spectra.The XRD results show that the thin film obtained at 300 ℃ possesses good polycrystalline structure,and the best crystal film with hexagonal structure can be achieved at annealing temperature of 700 ℃.AFM results show that the annealed thin films at this condition have even surface and crystal grains.The best optical quality for ZnO thin films emerges at post-annealing temperature of 700 ℃ by the observation of PL spectra.