| ~85Rb原子D_2线饱和吸收谱稳定半导体激光频率 |
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| 引用本文： | 钱进,倪育才,赵克功,陈荣,李义民,王庆吉.~85Rb原子D_2线饱和吸收谱稳定半导体激光频率[J].计量学报,1993(1). |
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| 作者姓名： | 钱进 倪育才 赵克功 陈荣 李义民 王庆吉 |
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| 作者单位： | 中国计量科学研究院，中国计量科学研究院，中国计量科学研究院，北京大学无线电系，北京大学无线电系，北京大学无线电系 北京 100013，北京 100013，北京 100013，北京 100871，北京 100871，北京 100871 |
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| 摘 要： | 用780nm AlGaAs半导体激光器和差分放大技术,观测了~(85)Rb原子D_2线(5S_(1/2)-5P_(3/2))B分量(5S_(1/2),F=2→5P_(3/2),F=1,2,3)的消多普勒饱和吸收谱。利用一阶导数和三阶导数稳频技术,实现了对AlGaAs半导体激光的稳频,对于1s和10s的取样时间,频率稳定度可达10~(-10)～10~(-11)。
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| 关 键 词： | 半导体激光 激光稳频 Rb原子光谱 饱和吸收 |
Frequency Stabilization of 780. Inm Semiconductor Laser Using Saturated Absorption Line of ~(85)Rb |
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| Qian Jin,Ni Yucai,Zhao Kegong.Frequency Stabilization of 780. Inm Semiconductor Laser Using Saturated Absorption Line of ~(85)Rb[J].Acta Metrologica Sinica,1993(1). |
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| Authors: | Qian Jin Ni Yucai Zhao Kegong |
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| Abstract: | The Doppler-free saturated absorption, spectrum of D2 line, B component of 85Rb is observed by using an AlGaAs diode laser and the technique of subtraction amplifier. The frequency of diode laser is successfully locked to the center of saturated absorption peak of D2 line, B component of 85Rb by using the first and the third derivative locking methods. The frequency stabilization obtained is between 10-10 ~10-11 for averaging time T = 1 and 10 sec. |
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| Keywords: | Semiconductor laser Laser frequency stabilization Rb spectrum Saturated absorption |
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