Affiliation: | 1. The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071 P. R. China
Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071 P. R. China;2. The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071 P. R. China;3. The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071 P. R. China
Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071 P. R. China
Xidian-Wuhu Research Institute, Wuhu, 241000 P. R. China;4. National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 P. R. China |
Abstract: | The advent of big data era has put forward higher requirements for electronic nanodevices that have low energy consumption for their application in analog computing with memory and logic circuit to address attendant energy efficiency issues. Here, a miniaturized diode with a reversible switching state based on N-n MoS2 homojunction used a bandgap renormalization effect through the band alignment type regulated by both dielectric and polarization, controllably switched between type-I and type-II, which can be simulated as artificial synapse for sensing memory processing because of its rectification, nonvolatile characteristic and high optical responsiveness. The device demonstrates a rectification ratio of 103. When served as memory retention time, it can attain at least 7000 s. For the synapse simulation, it has an ultralow-level energy consumption because of the pA-level operation current with 5 pJ for long-term potentiation and 7.8 fJ for long-term depression. Furthermore, the paired pulse facilitation index reaches up to 230%, and it realizes the function of optical storage that can be applied to simulate visual cells. |