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Physical and reliability characteristics of Hf-based gate dielectrics on strained-Si/sub 1-x/Ge/sub x/ MOS devices |
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| Authors: | Pei-Jer Tzeng Maikap S. Peng-Shiu Chen Yu-Wei Chou Chieh-Shuo Liang Lurng-Shehng Lee |
| Affiliation: | Electron. Res. & Service Organ., Ind. Technol. Res. Inst., Hsinchu, Taiwan; |
| Abstract: | |
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