| 高阶紧致差分与ADI结合的器件模拟方法 |
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| 引用本文： | 刘战,须自明,王国章,于宗光.高阶紧致差分与ADI结合的器件模拟方法[J].固体电子学研究与进展,2006,26(2):230-233. |
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| 作者姓名： | 刘战 须自明 王国章 于宗光 |
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| 作者单位： | 1. 江南大学信息工程学院,江苏,无锡,214036
2. 江南大学信息工程学院,江苏,无锡,214036;中国电子科技集团公司第58研究所,江苏,无锡,214035 |
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| 摘 要： | 采用AD I与高阶紧致差分相结合的方法计算大型非对称稀疏矩阵,并实现了该算法在半导体器件模拟中的应用。数值计算表明,这种方法可以降低方程的迭代次数约35%,并明显减少方程的求解时间。
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| 关 键 词： | 交替方向隐式方法 高阶紧致差分 器件模拟 |
| 文章编号： | 1000-3819(2006)02-230-04 |
| 收稿时间： | 2005-06-06 |
| 修稿时间： | 2005-07-27 |
Method of Application of Combining ADI and the High-order Compact Finite Difference to Semiconductor Device Simulation |
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| LIU Zhan,XU Ziming,WANG Guozhang,YU Zongguang.Method of Application of Combining ADI and the High-order Compact Finite Difference to Semiconductor Device Simulation[J].Research & Progress of Solid State Electronics,2006,26(2):230-233. |
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| Authors: | LIU Zhan XU Ziming WANG Guozhang YU Zongguang |
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| Affiliation: | 1 School of Information Engineering, Jiangnan University, Wuxi, Jiangsu, 214036, CHN;2 The 58th Research Institute, China Electronics Technology Group Corporation, Wuxi, Jiangsu, 214035, CHN |
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| Abstract: | In this paper, we apply ADI and high-order compact finite difference method for large-scale asymmetric sparse matrix in semiconductor device simulation. Numerical results present that this method can decrease the iterative number by 35 % and reduce the computation time greatly. |
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| Keywords: | ADI high-order compact finite difference device simulation |
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