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四管CMOS图像传感器中像素图像拖影的二维仿真与优化
引用本文:于俊庭,李斌桥,于平平,徐江涛,牟村.四管CMOS图像传感器中像素图像拖影的二维仿真与优化[J].半导体学报,2010,31(9):094011-5.
作者姓名:于俊庭  李斌桥  于平平  徐江涛  牟村
基金项目:supported by the National Natural Science Foundation of China(Nos.60806010 60976030); the Tianjin Innovation Special Funds for science and Technology China(No.05FZZDGX00200)
摘    要:Pixel image lag in a 4-T CMOS image sensor is analyzed and simulated in a two-dimensional model. Strategies of reducing image lag are discussed from transfer gate channel threshold voltage doping adjustment, PPD N-type doping dose/implant tilt adjustment and transfer gate operation voltage adjustment for signal electron transfer. With the computer analysis tool ISE-TCAD, simulation results show that minimum image lag can be obtained at a pinned photodiode n-type doping dose of 7.0 × 1012 cm–2, an implant tilt of –2o, a transfer gate channel doping dose of 3.0 × 1012 cm-2 and an operation voltage of 3.4 V. The conclusions of this theoretical analysis can be a guideline for pixel design to improve the performance of 4-T CMOS image sensors.

关 键 词:CMOS图像传感器  仿真结果  滞后  像素  二维  优化  调整电压  工作电压

Two-dimensional pixel image lag simulation and optimization in a 4-T CMOS image sensor
Yu Junting,Li Binqiao,Yu Pingping,Xu Jiangtao and Mou Cun.Two-dimensional pixel image lag simulation and optimization in a 4-T CMOS image sensor[J].Chinese Journal of Semiconductors,2010,31(9):094011-5.
Authors:Yu Junting  Li Binqiao  Yu Pingping  Xu Jiangtao and Mou Cun
Affiliation:School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China;School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China;School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China;School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China;Logistics Management Office, Hebei University of Technology, Tianjin 300130, China
Abstract:
Keywords:image lag  two-dimensional simulation  doping dose  implant tilt  CMOS image sensor
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