A new test structure for extracting extrinsic parameters indouble-polysilicon bipolar transistors |
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| Authors: | Sanden M. Zhang S.-L. Grahn J.V. Ostling M. |
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| Affiliation: | Dept. of Electron., Kungl. Tekniska Hogskolan, Kista; |
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| Abstract: | A new test structure for parameter extraction is presented and implemented in a double-polysilicon bipolar junction transistor (BJT) process. The test structure is basically a real BJT, but without the intrinsic base. The test structure allows extraction of the base, collector and emitter impedances, and the extrinsic base-collector capacitance |
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