Subthreshold behaviour of e.s.f.i.-s.o.s. transistors |
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Authors: | Kranzer Ditmar Fichtner Wolfgang |
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Affiliation: | Siemens AG, Werk für Bauelemente, München, West Germany; |
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Abstract: | Theoretical and experimental results are presented which illustrate the influence of various parameters on the subthreshold behaviour of e.s.f.i.-s.o.s. transistors. The numerical analysis accounts for the thin silicon film and the existence of a second interface. A comparison is made with a corresponding bulk transistor, furthermore, between a two- and a one-dimensional analysis of e.s.f.i.-s.o.s. m.o.s.t. The agreement for real cases is found to be excellent. |
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