| 电荷泵法研究FLASH擦工作时带带隧穿引起的界面损伤 |
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| 引用本文： | 苏昱,朱钧,陈宇川,潘立阳,刘志弘.电荷泵法研究FLASH擦工作时带带隧穿引起的界面损伤[J].半导体学报,2001,22(1):69-73. |
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| 作者姓名： | 苏昱 朱钧 陈宇川 潘立阳 刘志弘 |
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| 作者单位： | 清华大学微电子所，北京100084 |
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| 摘 要： | FL ASH在擦操作的过程中 ,带带隧穿产生的空穴注入将会在 Si O2 / Si O2 界面和氧化层中产生带电中心 (包括界面态和陷阱 ) ,影响电路的可靠性 .利用电荷泵方法 ,通过应力前后电荷泵电流的改变确定出界面态和陷阱电荷的空间分布 ,为 FL ASH单元设计与改进可靠性 ,提供了理论和实验基础
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| 关 键 词： | 带带隧穿 电荷泵 倍增因子 |
| 文章编号： | 0253-4177(2001)01-0069-05 |
| 修稿时间： | 1999年7月1日 |
Charge Pumping Measurement for Determing Band-to-Band-Tunneling Induced Interface Damage During Erasing Operation of FLASH |
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| SU Yu,ZHU Jun,CHEN Yu- chuan,PAN Li- yang and LIU Zhi- hong.Charge Pumping Measurement for Determing Band-to-Band-Tunneling Induced Interface Damage During Erasing Operation of FLASH[J].Chinese Journal of Semiconductors,2001,22(1):69-73. |
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| Authors: | SU Yu ZHU Jun CHEN Yu- chuan PAN Li- yang and LIU Zhi- hong |
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| Abstract: | A charge pumping method is proposed for the m easurem ent of hole- induced interface states and trapped charges due to band- to- band- tunneling the effects during the erasing operation of FL ASH. These charges affect the long reliability of ICs. The spatial distribution of surface states and trapped charges are directly determ ined by the variation of the charge- pum ping currentbefore and after applying stress.Theoretical and experim ental bases are provided for the cell design of FL ASH and the im provement in reliability. |
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| Keywords: | band- to- band- tunneling charge pum ping multiple factor |
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