Gallium telluride heterojunctions |
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| Authors: | V. N. Katerinchuk M. Z. Kovalyuk |
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| Affiliation: | (1) Institute of Problems in Material Science, National Academy of Sciences of Ukraine, Chernovtsy |
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| Abstract: | The photoelectric properties of In2O3-GaTe and GaTe-InSe heterojunctions were investigated. Their characteristics were described using a diffusion model of the heterojunction. Some deviation of the characteristics from ideal was observed for In2O3-GaTe heterojunctions as a result of the presence of a thin dielectric layer at the heteroboundary. Qualitative energy band diagrams were constructed for the heterojunction and their photosensitivity was determined in the range 0.33–1.0 μm. Pis’ma Zh. Tekh. Fiz. 25, 29–33 (January 26, 1999) |
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