Electrical properties of chemically prepared nonstoichiometric CuIn(S,Se)2 thin films |
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| Authors: | R. H. Bari L. A. Patil A. Soni G. S. Okram |
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| Affiliation: | (1) P.G. Department of Physics, Pratap College, Amalner, 425 401, India;(2) UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore, 452 001, India |
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| Abstract: | Polycrystalline thin films of copper indium sulphoselenide [CuIn(S,Se)2] were deposited on glass substrate by chemical bath deposition technique. The deposition parameters such as pH, temperature and time were optimized. A set of films having different elemental compositions was prepared by varying Cu/In ratio from 1·87–12·15. The films were characterized by X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDAX). The chemical composition of the CuIn(S,Se)2 was found to be nonstoichiometric. The d.c. conductivities of the films were studied below and near room temperature. The thermo-electric power of the films was also measured and type of semiconductivity was ascertained. |
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| Keywords: | CuIn(S,Se)2 thin films chemical bath deposition technique d.c. conductivity thermoelectric power |
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