| Abstract: | LB heterofilms of double layer consisting of arachidic acid and 2-pentadecyl-7, 7′, 8, 8′-tetracyanoquinodimethane (C15 · TCNQ) LB films were sandwiched between Al and Au thin evaporated films. Such layer structures of Al/LB heterofilm/Au were deposited on the SiO2 insulating film of silicon wafters. Resistance in the surface direction of the above layer structure was measured by the four-point probe technique. As a result, very low resistance of 10?2 ～ 10?3 Ω was obtained by the electrode system of gap 3.3 mm with width 10 mm. It was clarified in the experiments that the current flowed through the LB heterofilms of about 200 ～ 30 Å in thickness; accordingly the resistivity of LB heterofilms was calculated to be 10?8 ～ 10?9 Ω cm. Such a value of resistivity was much smaller than the metal resistivity of 10?5 Ω cm. Furthermore, the current through the LB film, increased up to 1.3A, was equivalent to the very high current density of 4.1 ～ 105 A/cm2. However, the resistance was increased suddenly by 106 times at that time and the current was decreased to 3 ～ 10?4 A. Such a switching phenomenon could be observed repeatedly. The ultraflow resistance and the very high current density observed in the LB heterofilms will be explained by the model of the potential well filled with electron gas which was generated in the LB hetero-film by the polarization of C15 · TCNQ LB film. |
