Low threshold 650 nm band real refractive index-guided AlGaInPlaser diodes with strain-compensated MQW active layer |
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| Authors: | Honda S Miyake T Ikegami T Yagi K Bessho Y Hiroyama R Shone M Sawada M |
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| Affiliation: | LED Div., Tottori Sanyo Electr. Co Ltd.; |
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| Abstract: | 650 nm band real refractive index-guided AlGaInP laser diodes with a strain-compensated MQW active layer have been successfully fabricated. A threshold current of 9 mA, which is the lowest ever reported was achieved and 5 mW operation was obtained up to 120°C. These lasers have been operated for >3000 h under 5 mW at 90°C |
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