| 室温下Cu/Sn3.5Ag焊点/Cu体系中电迁移引发裂纹的形成 |
| |
| 引用本文： | 何洪文,徐广臣,郭福.室温下Cu/Sn3.5Ag焊点/Cu体系中电迁移引发裂纹的形成[J].半导体学报,2009,30(3):033006-4. |
| |
| 作者姓名： | 何洪文 徐广臣 郭福 |
| |
| 作者单位： | College;Materials;Science;Engineering;Beijing;University;Technology; |
| |
| 基金项目： | 教育部新世纪优秀人才支持计划 |
| |
| 摘 要： | Electromigration （EM） behavior of Cu/Sn3.5Ag/Cu solder reaction couple was investigated with a high current density of 5 × 10^3 A/cm^2 at room temperature. One dimensional structure, copper wire/solder ball/copper wire SRC was designed and fabricated to dissipate the Joule heating induced by the current flow. In addition, thermomigration effect was excluded due to the symmetrical structure of the SRC. The experimental results indicated that micro-cracks initially appeared near the cathode interface between solder matrix and copper substrate after 474 h current stressing. With current stressing time increased, the cracks propagated and extended along the cathode interface. It should be noted that the continuous Cu6Sn5 intermetallic compounds （IMCs） layer both at the anode and at the cathode remained their sizes. Interestingly, tiny cracks appeared at the root of some long columntype Cu6Sn5 at the cathode interface due to the thermal stress.
|
| 关 键 词： | 裂缝 室温 反应 焊料 电迁移 高电流密度 情侣 金属间化合物 |
| 收稿时间： | 9/18/2008 8:00:27 AM |
Electromigration-induced cracks in Cu/Sn3:5Ag/Cu solder reaction couple at room temperature |
| |
| He Hongwen,Xu Guangchen and Guo Fu.Electromigration-induced cracks in Cu/Sn3:5Ag/Cu solder reaction couple at room temperature[J].Chinese Journal of Semiconductors,2009,30(3):033006-4. |
| |
| Authors: | He Hongwen Xu Guangchen and Guo Fu |
| |
| Affiliation: | College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China;College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China |
| |
| Abstract: | Electromigration (EM) behavior of Cu/Sn3:5Ag/Cu solder reaction couple was investigated with a high current density of 5E3A/cm2 at room temperature. One dimensional structure, copper wire/solder ball/copper wire SRC was designed and fabricated to dissipate the Joule heating induced by the current flow. In addition, thermomigration effect was excluded due to the symmetrical structure of the SRC. The experimental results in-dicated that micro-cracks initially appeared near the cathode interface between solder matrix and copper substrate after 474 h current stressing. With current stressing time increased, the cracks propagated and extended along the cathode interface. It should be noted that the continuous Cu6Sn5 intermetallic compounds (IMCs) layer both at the anode and at the cathode remained their sizes. Interestingly, tiny cracks appeared at the root of some long column-type Cu6Sn5 at the cathode interface due to the thermal stress. |
| |
| Keywords: | electromigration cracks intermetallic compounds thermal stress |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
