In-situ spectroscopic study of the As and Te on the Si (112) surface for high-quality epitaxial layers |
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| Authors: | M. Jaime-Vasquez M. Martinka R. N. Jacobs M. Groenert |
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| Affiliation: | (1) U.S. Army Research, Development and Engineering Command (RDECOM) Communications Electronics Research, Development and Engineering Center (CERDEC) Night Vision and Electronic Sensors Directorate (NVESD), 10215 Burbeck Road, 22060-5806 Fort Belvior, VA |
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| Abstract: | A detailed analysis of the As-exposed Si (112) and subsequent Te exposure was performed. X-ray photoelectron spectroscopy shows that the Te- and As-exposed Si (112) surface had 70% As and 27% Te coverage, respectively. Direct surface coverage measurement with ion scattering spectroscopy (ISS) shows that the Si (111) surface is completely covered by As, and that of the Si (112) had about 78% and 20% coverage of As and Te, respectively. Finally, using ISS shadowing effects, it was found that the Te atoms were positioned mainly on the step edges. |
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| Keywords: | Te/As/Si (112) adsorption molecular beam epitaxy (MBE) substrate x-ray photoelectron spectroscopy (XPS) ion scattering spectroscopy (ISS) |
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