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| ICP－AES法测定二氧化硅中的微量杂质元素 | |
| 引用本文： | 颜科,虞建平,谭明霞. ICP－AES法测定二氧化硅中的微量杂质元素[J]. 硅酸盐通报, 1996, 0(5) |
| 作者姓名： | 颜科 虞建平 谭明霞 |
| 作者单位： | 南京玻璃纤维研究设计院 |
| 摘 要： | 试样经硫酸—氢氟酸分解，在盐酸介质中用ＩＣＰ－ＡＥＳ法测定二氧化硅中的微量杂质元素。该方法与原子吸收法（ＡＡ）和分光光度法相比更为优越，其化学干扰少，操作简便，快速，重显性好，准确度高，测定结果的相对标准偏差（ＲＳＤ）小于５％ |
| 关 键 词： | 二氧化硅，杂质元素，ICP－AES法 |
Determination of Trace Impurities in Silicon Dioxide by ICP-AES |
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| Yan Ke Yu Jianpin Tan Mingxia. Determination of Trace Impurities in Silicon Dioxide by ICP-AES[J]. Bulletin of the Chinese Ceramic Society, 1996, 0(5) | |
| Authors: | Yan Ke Yu Jianpin Tan Mingxia |
| Affiliation: | Nanjing Fiberglass Research and Design Institute |
| Abstract: | The sample was decomposed by H 2SO 4-HF. In a medium containing HCl, the trace impurities were determined by ICP-AES. The method is more advantageous than AA and spectrophotometry which are used at present. It includes less chemical interference and is easier and faster to operate with stable data and accurate results, and the RSD is <5%. |
| Keywords: | silicon dioxide impurities ICP-AES |
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