| 氧化铟薄膜制备及其特性研究 |
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| 引用本文： | 原子健,朱夏明,王雄,张莹莹,万正芬,邱东江,吴惠桢,杜滨阳.氧化铟薄膜制备及其特性研究[J].无机材料学报,2010,15(2):141-144. |
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| 作者姓名： | 原子健 朱夏明 王雄 张莹莹 万正芬 邱东江 吴惠桢 杜滨阳 |
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| 作者单位： | （浙江大学 1. 物理系 硅材料国家重点实验室; 2. 高分子系, 杭州 310027) |
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| 基金项目： | 国家自然科学基金(60676003); 浙江省自然科学基金(Z406092) |
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| 摘 要： | 采用射频磁控溅射法在玻璃衬底上制备氧化铟薄膜,通过测试原子力显微镜、X射线衍射、X射线光电子谱、紫外可见分光光度计以及霍尔效应,研究了氧化铟薄膜的结构和光、电特性.实验发现,氧化铟薄膜表面粗糙度随着生长温度的升高而增大.X射线衍射结果表明薄膜为立方结构的多晶体,并且随着生长温度的升高,可以看到氧化铟薄膜的晶粒变大以及半高宽减小,这也说明结晶质量的改善.在可见光范围的透射率超过90%.同时,在氩气氛围下制备的薄膜迁移率最大,其电阻率、霍尔迁移率和电子浓度分别达到了0.31Ω.cm、9.69 cm2/(V.s)和1×1018cm-3.退火处理可以改善氩氧氛围下制备的薄膜的电学性能.
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| 关 键 词： | 氧化铟 射频磁控溅射 表面形貌 X射线衍射 电学特性 |
| 收稿时间： | 2009-05-18 |
| 修稿时间： | 2009-09-02 |
Preparation and Characteristics of Indium Oxide Thin Films |
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| YUAN Zi-Jian,ZHU Xia-Ming,WANG Xiong,ZHANG Ying-Ying,WAN Zheng-Fen,QIU Dong-Jiang,WU Hui-Zhen,DU Bin-Yang.Preparation and Characteristics of Indium Oxide Thin Films[J].Journal of Inorganic Materials,2010,15(2):141-144. |
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| Authors: | YUAN Zi-Jian ZHU Xia-Ming WANG Xiong ZHANG Ying-Ying WAN Zheng-Fen QIU Dong-Jiang WU Hui-Zhen DU Bin-Yang |
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| Affiliation: | (1. Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China; 2. Department of Polymer Science, Zhejiang University, Hangzhou 310027, China) |
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| Abstract: | In2O3 thin films were prepared on glass substrates by radio frequency(RF) magnetron sputtering.The structural,electrical and optical characteristics of In2O3 films were investigated by atomic force microscope(AFM),X-ray diffraction(XRD),X-ray photoelectron spectroscope,UV-Visible spectrophotometer and Hall effect measurements.It is found that the surface roughness of In2O3 thin film increases with growth temperature increasing.The X-ray diffraction(XRD) studies show that the films are polycrystalline and re... |
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| Keywords: | In2O3 RF magnetron sputtering surface morphology XRD electrical properties |
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