| 砷化镓表面自旋极化光电子发射 |
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| 引用本文： | 周清,赵守珍,李育民,方兰,张黎明.砷化镓表面自旋极化光电子发射[J].电子与信息学报,1990,12(2):219-224. |
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| 作者姓名： | 周清 赵守珍 李育民 方兰 张黎明 |
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| 作者单位： | 南开大学电子科学系 天津
(周清，赵守珍，李育民，方兰)，南开大学电子科学系 天津(张黎明) |
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| 摘 要： | 本文详细地介绍了在圆偏振光作用下,NEA GaAs表面发射目旋极化光电子的原理,及NEA GaAs表面的制备和装置。介绍了表面Cs-O激活的方法。在用此法激活的NEA GaAs(100)表面上可得到灵敏度为8A/mW,极化度约用35%以上的光电子束。发现清洁的GaAs表面覆盖以50%60%Cs单原子层时,光电子的发射出现第一个极大值,同时发现稳定的发射取决于铯吸附量。
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| 关 键 词： | NEA光电发射 自旋极化电子源 圆偏振光 |
| 收稿时间： | 1987-9-29 |
| 修稿时间： | 1989-7-18 |
THE SPIN POLARIZED EFFECT OF PHOTOELECTRONS EMITTED FROM GaAs SURFACE |
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| Zhou Qing,Zhao Shouzhen,Li Yuming,Fang Lan,Zhang Liming.THE SPIN POLARIZED EFFECT OF PHOTOELECTRONS EMITTED FROM GaAs SURFACE[J].Journal of Electronics & Information Technology,1990,12(2):219-224. |
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| Authors: | Zhou Qing Zhao Shouzhen Li Yuming Fang Lan Zhang Liming |
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| Affiliation: | Nankai University, Tianjin |
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| Abstract: | The principle of the spin polarized effect of photoelectrons emitted from NEA GaAs surface which is irradiated by circularly polarized light is described in detail. The preparation of NEA GaAs surface and apparatus used also are mentioned. A photoelectron beam with sensitivity of 8 A/mW and polarization of above 35% is obtained on the NEA GaAs (100) surface in the activation with caesium and oxygen. It is found that the first maximum emission occurs as the GaAs surface is caesiated in a monolayer of 50% to 60% and unstable emission is caused by desorption of caesium. |
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| Keywords: | NEA photoemission Spin polarization electron source Circularly polarized light |
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