| LD端面泵浦固体激光器理论在测量Nd：YVO4晶体有效受激发射截面中的应用 |
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| 引用本文： | 王正平,孙洵,许心光,孙连科,张少军,孟宪林,程瑞平,邵宗书.LD端面泵浦固体激光器理论在测量Nd：YVO4晶体有效受激发射截面中的应用[J].量子电子学报,2001,18(2):103-106. |
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| 作者姓名： | 王正平 孙洵 许心光 孙连科 张少军 孟宪林 程瑞平 邵宗书 |
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| 作者单位： | [1]山东大学晶体材料国家重点实验室，济南250100 [2]山东大学晶体材料国家重点实验室，济南2 |
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| 摘 要： | 对四种掺杂浓度的Nd:YVO4晶体进行了激光性质的研究和对比，从LD端面泵浦固体激光器的理论出发，结合实验数据计算了相应晶体的有产受 射截面σe。结果表明，随Nd^3 浓度的提高，Nd:YVO4晶体的有效受激发射截面σe逐渐增大，上能级寿命Te不断减小，两者的乘积在2at.%附近达到最大值。
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| 关 键 词： | LD端面泵浦 固体激光器 Nd：YVO4晶体 掺杂浓度 有效受激发射截面 |
| 文章编号： | 1007-5461(2001)02-0103-04 |
| 收稿时间： | 1999/6/28 |
| 修稿时间： | 1999年6月28日 |
Measuring Effective
Stimulated Emission Cross-sections of Nd:YVO4 Crystals by the Theory of LD
End-Dumped Solid-state Lasers |
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| Wang Zhengping,Sun Xun,XU Xinguang,SUN Lianke,ZHANG Shaojun,Meng Xianlin,Cheng Ruiping,Shao Zongshu.Measuring Effective
Stimulated Emission Cross-sections of Nd:YVO4 Crystals by the Theory of LD
End-Dumped Solid-state Lasers[J].Chinese Journal of Quantum Electronics,2001,18(2):103-106. |
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| Authors: | Wang Zhengping Sun Xun XU Xinguang SUN Lianke ZHANG Shaojun Meng Xianlin Cheng Ruiping Shao Zongshu |
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| Abstract: | The theory of LD end-pumped solid-state lasers is analyzed, and a method that measures the effective stimulated emission cross-section σe of laser crystal is ascertained. We compare the threshold and slope efficiency of four Nd:YVO4 crystals which have different doping levels, and calculate the σe of these crystals with upper-level life-times that have measured by us. Our results show that the 1.9at% Nd:YVO4 crystal has a σeTe of 18.3 μscm2 which is largest in all the four samples. |
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| Keywords: | LD end-pumped solid-state lasers Nd:YVO4 crystal doping level effective stimulated emission cross-section |
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