Selfaligned InGaAs/InP heterostructure bipolar transistors |
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| Authors: | Feygenson A. Temkin H. Tsang W.T. Yang L. Yadvish R.D. Scortino P.F. Jr. |
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| Affiliation: | AT&T Bell Labs., Murray Hill, NJ, USA; |
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| Abstract: | ![]()
InGaAs/InP heterostructure bipolar transistors have been realised using a new selfaligned process. Transistor wafers were grown by chemical beam epitaxy. Ideality factors close to unity were measured for emitter-base and collector-base diodes. The resulting devices exhibit nearly constant gain over four orders of magnitude of collector current densities, from j=1.5*10/sup -4/ A/cm/sup 2/ to 1.5 A/cm/sup 2/.<> |
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