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| Characteristics and Electrical Properties of SiNx：H Films Fabricated by Plasma-Enhanced Chemical Vapor Deposition | |
| 引用本文： | LING Xu-yu. Characteristics and Electrical Properties of SiNx：H Films Fabricated by Plasma-Enhanced Chemical Vapor Deposition[J]. 中国电子科技, 2005, 3(3): 264-267 |
| 作者姓名： | LING Xu-yu |
| 作者单位： | [1]College of Electronics and Information, Southwest University of Nationalities, Chengdu 610041 China |
| 摘 要： | SiNx：H films with different N/Si ratios are synthesized by plasma-enhanced chemical vapor deposition （PECVD）. Composition and structure characteristics are detected by Fourier transform infrared spectroscopy （FTIR） and X-ray photoelectron spectroscopy （XPS）. It indicates that Si-N bonds increase with increased NH3/SiH4 ratio. Electrical property investigations by I-V measurements show that the prepared films offer higher resistivity and less leakage current with increased N/Si ratio and exhibit entirely insulating properties when N/Si ratio reaches 0.9, which is ascribed to increased Si-N bonds achieved. |
| 关 键 词： | 氮化硅薄膜 等离子体 电性质 沉积作用 |
| 收稿时间： | 2005-07-01 |
Characteristics and Electrical Properties of SiNx:H Films Fabricated by Plasma-Enhanced Chemical Vapor Deposition |
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| LING Xu-yu. Characteristics and Electrical Properties of SiNx:H Films Fabricated by Plasma-Enhanced Chemical Vapor Deposition[J]. Journal of Electronic Science Technology of China, 2005, 3(3): 264-267 | |
| Authors: | LING Xu-yu |
| Abstract: | SiNx:H films with different N/Si ratios are synthesized by plasma-enhanced chemical vapor deposition (PECVD). Composition and structure characteristics are detected by Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). It indicates that Si-N bonds increase with increased NH3/SiH4 ratio. Electrical property investigations by I-V measurements show that the prepared films offer higher resistivity and less leakage current with increased N/Si ratio and exhibit entirely insulating properties when N/Si ratio reaches 0.9, which is ascribed to increased Si-N bonds achieved. |
| Keywords: | silicon nitride films electrical properties I-V measurement, plasma enhanced chemical vapor deposition |
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