首页 | 本学科首页   官方微博 | 高级检索  
     


A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs
Authors:Ortiz-Conde   A. Garcia-Sanchez   F. J. Muci   J. Malobabic   S. Liou   J. J.
Affiliation:Solid State Electron. Lab., Simon Bolivar Univ., Caracas;
Abstract:In this paper, we review the compact-modeling framework for undoped double-gate (DG) silicon-on-insulator (SOI) MOSFETs. The use of multiple gates has emerged as a new technology to possibly replace the conventional planar MOSFET when its feature size is scaled to the sub-50-nm regime. MOSFET technology has been the choice for mainstream digital circuits for very large scale integration as well as for other high-frequency applications in the low-gigahertz range. But the continuing scaling of MOSFET presents many challenges, and multiple-gate, particularly DG, SOI devices seem to be attractive alternatives as they can effectively reduce the short-channel effects and yield higher current drive. Core compact models, including the analysis for surface potential and drain-current, for both the symmetric and asymmetric DG SOI MOSFETs, are discussed and compared. Numerical simulations are also included in order to assess the validity of the models reviewed
Keywords:
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号