Kinetic Analysis of Chemical Vapor Deposition of Boron Nitride |
| |
| Authors: | Woo Y. Lee W. J. Lackey Pradeep K. Agrawal |
| |
| Affiliation: | Georgia Tech Research Institute and School of Chemical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 |
| |
| Abstract: | BN was deposited on Al2O3 substrates from the BCl3─NH3─Ar reagent system. An impinging jet reactor configuration was used to obtain kinetic data in the temperature range of 800° to 1000°C and in the pressure range of 4 to 20 kPa. The BN deposition could be described by a simple kinetic rate expression with an activation energy of about 39 kcal/mol and a first-order dependency on BCl3 concentration. The BN deposition rate increased with temperature, pressure, and BCl3 concentration. The microstructure of the BN coatings was not strongly influenced by the process parameters. |
| |
| Keywords: | chemical vapor deposition boron nitride kinetics models microscopy |
|
