An infrared study of the structure of GeO2-CeO2 thin films

The infrared spectra of amorphous thin films consisting of GeO₂ co-evaporated with CeO₂ are presented and interpreted in relation to the spectrum of the pure amorphous GeO₂ film. The lower frequency side of the broad absorption band within this spectrum peaking at 730 cm^–1 is believed to be due to defect centres similar to the O₁^– and O₃⁺ centres found in a-SiO₂. Absorption at higher frequencies within this band is due to the O stretch vibrations of the Ge-O-Ge linkage. After considering the vibrations of the O₁^– and O₃⁺ centres in detail, it is shown that the band at 495 cm^–1 cannot be due to either of these centres and must therefore by caused by some other reactive defect centres. The variation of the position of the 730 cm^–1 peak within the series of spectra is noted and probable explanations are offered. The optical absorption edge of a-GeO₂ thin film is compared with that of a-SiO and a possible explanation of the basic differences is proposed.