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Characterisation of JSR’s spin-on hardmask FF-02 |
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| Authors: | A. Das, Q. T. Le, Y. Furukawa, V. H. Nguyen, V. Terzieva, F. de Theije, C. M. Whelan, M. Maenhoudt, H. Struyf, Zs. T kei, F. Iacopi, M. Stucchi, L. Carbonell, I. Vos, H. Bender, M. Patz, G. Beyer, M. Van Hove,K. Maex |
| Affiliation: | a IMEC, 75 Kapeldreef, B-3001, Leuven, Belgium b Philips Research Leuven, 75 Kapeldreef, B-3001, Leuven, Belgium c KULeuven, EE Department, 94 Kard. Mercierlaan, B-3001, Leuven, Belgium d JSR Corporation, 25 Miyukigaoka, Tsukuba, Ibaraki 305-0841, Japan |
| Abstract: | Some of the spin-on interlayer dielectrics (ILD) with dielectric constant k below 2.3, targeted for the 65 nm node and below, are available with their spin-on hard masks (SoHM) to reduce the total effective capacitance and to provide high selectivity to their respective ILDs during integration. In this work, FF-02, JSR’s SoHM is characterised. Its thermal stability, chemical compatibility to stripping solutions and resistance to moisture are investigated. Methods to seal the surface of FF-02 to chemicals are explored. Electrical properties including the dielectric constant, leakage current and breakdown fields are evaluated in planar capacitors and in single damascene structures. |
| Keywords: | Spin-on hardmask FF-02 (JSR) Sealing Electrical properties |
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